ترانزیستور ماسفت (Transistor MOSFET) 356 کالا یافت شد
نمایش 1 تا 30
MPF 102MOT
MPF 102MOT
N-Channel RF Amplifier \\ This device is designed for electronic switching applications such as low ON resistance analog switching Sourced from process 50.\\Drain-Gate Voltage 25 V
IRF 5305 TO-220
IRF 1010
IRF 9Z24N
IRF 9Z24N
Metal oxide P-channel FET, enhancement type // Drain-to-Source Breakdown Voltage = -55V
IRF 520
IRF 520
Metal oxide N-channel FET, enhancement type V-MOS, 100V, 9,2A, 60W, <0,27ê(5,5A)
IRF 9610
IRF 9610
Metal oxide P-channel FET , enhancement type // V-MOS , 200V , 1,8A , 20W , 9A)
IRFP 9240
IRF 2807
IRF 540 ORG
IRF 540 ORG
N-channel TrenchMOS transistor // Drain-source voltage = 100 V // Continuous drain current = 23 A
IRF 730
IRF 730
Powermesh™II Power MOSFET // Drain-source voltage = 400 V // Drain current = 5.5 A
IRFP 064N ORG
IRF 9530 TO-220
IRF 9530 TO-220
P-CHANNEL POWER MOSFET // DRAIN SOURCE VOLTAGE 100V // DRAIN CURRNET= 12A
IRFP 460C ORG
K 4096 TO-220F
K 4096 TO-220F
General-Purpose Switching Device Applications // Drain-to-Source Voltage(VDSS)= 500 V
IRF 1404
IRF 1404
Advanced Process Technology Ultra Low On-Resistance // VDSS = 40V // ID = 75A.
IRF 9540
60N10
STK 630 ORG
ORG STK 630 ORG
Avalanche rugged technology. Low input capacitance.// Drain-source voltage (VDSS) =200 V
IRF 630
K 2645
K 2645
High Speed Switching // Drain-Source-Voltage = 500 V // Continous Drain Current = 10 A
IRFZ 34
IRFP 250 ORG
K 2850
IRF 640
IRF 640
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS // Drain-Source Voltage = 200 V // Continuous Drain Current = 18 A
BUZ 90 METAL ORG
ORG BUZ 90 METAL ORG
Metal oxide N-channel FET, enhancement type // V-MOS, 600V, 4,5A, 75W, <1,6ê(2,8A)
IRFP 150
K 2545
K 2545
DC-DC Converter, Relay Drive and Motor Drive Applications // Drain-source voltage = 600 V // Drain current = 6 A