ترانزیستور ماسفت (Transistor MOSFET) 356 کالا یافت شد

N-Channel RF Amplifier \\ This device is designed for electronic switching applications such as low ON resistance analog switching Sourced from process 50.\\Drain-Gate Voltage 25 V

Advanced Process Technology Ultra Low On-Resistance // VDSS = 60V // ID = 75A

Metal oxide P-channel FET, enhancement type // Drain-to-Source Breakdown Voltage = -55V

Metal oxide N-channel FET, enhancement type V-MOS, 100V, 9,2A, 60W, <0,27ê(5,5A)

Metal oxide P-channel FET , enhancement type // V-MOS , 200V , 1,8A , 20W , 9A)

Metal oxide P-channel FET enhancement type // V-MOS 200V 12A 150W,

Advanced Process Technology Ultra Low On-Resistance // VDSS = 75V // ID = 82A

N-channel TrenchMOS transistor // Drain-source voltage = 100 V // Continuous drain current = 23 A

Powermesh™II Power MOSFET // Drain-source voltage = 400 V // Drain current = 5.5 A

Advanced Process Technology // VDSS = 55V // ID = 110A

P-CHANNEL POWER MOSFET // DRAIN SOURCE VOLTAGE 100V // DRAIN CURRNET= 12A

N-Channel MOSFET // Drain-Source Voltage = 500 V // Drain Current = 20 A

General-Purpose Switching Device Applications // Drain-to-Source Voltage(VDSS)= 500 V

Advanced Process Technology Ultra Low On-Resistance // VDSS = 40V // ID = 75A.

P-Channel PowerMOSFETs // 19A 100V 0.200 Ohm

Avalanche rugged technology. Low input capacitance.// Drain-source voltage (VDSS) =200 V

N-channel // Drain-source voltage = 200 V // Drain current = 9 a

High Speed Switching // Drain-Source-Voltage = 500 V // Continous Drain Current = 10 A

Metal oxide N-channel FET enhancement type // TR IRFZ 34 = IRFSZ 30 // 60V

N-Channel Enhancement Mode // VDSS = 200 V // ID (cont) = 30 A

900V 6A 125W

N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS // Drain-Source Voltage = 200 V // Continuous Drain Current = 18 A

Metal oxide N-channel FET, enhancement type // V-MOS, 600V, 4,5A, 75W, <1,6ê(2,8A)

V-MOS, 100V, 43A, 193W, <40mê(21,5A)

DC-DC Converter, Relay Drive and Motor Drive Applications // Drain-source voltage = 600 V // Drain current = 6 A

Metal oxide N-channel FET enhancement type // V-MOS 200V 46A 280W

SMD,N-Channel Enhancement Mode FET, 25V 50A 50W AOD472