ترانزیستور ماسفت (Transistor MOSFET) 353 کالا یافت شد

N-channel TrenchMOS transistor // Drain-source voltage = 100 V // Continuous drain current = 23 A

Advanced Process Technology Ultra Low On-Resistance // VDSS = 55V // ID = 110A

Advanced Process Technology Ultra Low On-Resistance // VDSS = 60V // ID = 75A

Metal oxide P-channel FET, enhancement type // Drain-to-Source Breakdown Voltage = -55V

Metal oxide N-channel FET, enhancement type V-MOS, 100V, 9,2A, 60W, <0,27ê(5,5A)

PowerMESH™ II Power MOSFET // Drain-source voltage = 400 V // Drain current = 10 A

Advanced Process Technology Ultra Low On-Resistance // VDSS = 40V // ID = 75A.

Advanced Process Technology Ultra Low On-Resistance // VDSS = 75V // ID = 82A

Powermesh™II Power MOSFET // Drain-source voltage = 400 V // Drain current = 5.5 A

Metal oxide P-channel FET enhancement type // V-MOS 200V 12A 150W,

Metal oxide P-channel FET , enhancement type // V-MOS , 200V , 1,8A , 20W , 9A)

Advanced Process Technology // VDSS = 55V // ID = 110A

N-Channel MOSFET // Drain-Source Voltage = 500 V // Drain Current = 20 A

P-CHANNEL POWER MOSFET // DRAIN SOURCE VOLTAGE 100V // DRAIN CURRNET= 12A

PowerMesh™II MOSFET // Drain-source Voltage = 500 V // Drain Current = 8 A

P-Channel PowerMOSFETs // 19A 100V 0.200 Ohm

Thinkisemi 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold

N-CHANNEL MOSFET\\2 Amps,600 Volts\\Drain-Source Voltage VDSS= 600 V\\Gate-Source Voltage VGSS= ±30 V

N-channel enhancement mode // Drain-source voltage = 55 V // Drain current = 64 A

General-Purpose Switching Device Applications // Drain-to-Source Voltage(VDSS)= 500 V

N-CHANNEL Drain to Source Voltage VDSS 500 V // POWER MOSFET

N-Channel Enhancement Mode // VDSS = 200 V // ID (cont) = 30 A

riac, 800V 8A IGT=30mA Full-wave thyristor (tria

Metal oxide N-channel FET enhancement type // V-MOS 60V 17A 60W

N-channel // Drain-source voltage = 200 V // Drain current = 9 a

High Speed Switching // Drain-Source-Voltage = 500 V // Continous Drain Current = 10 A

Advanced Process Technology // VDSS = -55V // ID = -19A