ترانزیستور ماسفت (Transistor MOSFET) 356 کالا یافت شد

N-channel enhancement mode // Drain-source voltage = 55 V // Drain current = 49 A

N-Channel RF Amplifier \\ This device is designed for electronic switching applications such as low ON resistance analog switching Sourced from process 50.\\Drain-Gate Voltage 25 V

N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS // Drain-Source Voltage = 200 V // Continuous Drain Current = 18 A

STripFET Power MOSFET, 75V, 80A, 300W

Advanced Process Technology Ultra Low On-Resistance // VDSS = 60V // ID = 75A

Metal oxide P-channel FET, enhancement type // Drain-to-Source Breakdown Voltage = -55V

Metal oxide N-channel FET, enhancement type V-MOS, 100V, 9,2A, 60W, <0,27ê(5,5A)

N-Channel Enhancement Mode MOSFET 60V / 120 A , R DS(ON) = 6.0 mW (typ. ) @ V GS = 10V

Advanced Process Technology Ultra Low On-Resistance // VDSS = 55V // ID = 110A

N-CHANNEL // Drain-source Voltage = 100 V // Drain Current = 14 A

Metal oxide P-channel FET , enhancement type // V-MOS , 200V , 1,8A , 20W , 9A)

N-CHANNEL MOSFET\\2 Amps,600 Volts\\Drain-Source Voltage VDSS= 600 V\\Gate-Source Voltage VGSS= ±30 V

N-CHANNEL POWER MOSFET // Drain-Source Voltage = 600 V // Drain Current (Continuous) = 4.5 A

PowerMESH™ II Power MOSFET // Drain-source voltage = 400 V // Drain current = 10 A

Metal oxide P-channel FET enhancement type // V-MOS 200V 12A 150W,

Advanced Process Technology Ultra Low On-Resistance // VDSS = 75V // ID = 82A

N-Channel MOSFET // Gate-Source Voltage (VGS)= 20 V // Continuous Drain Current = 70 a

PowerMesh™II MOSFET // Drain-source Voltage = 500 V // Drain Current = 8 A

N-CHANNEL MOSFET // Drain-Source Voltage = 600 V // Continuous Drain Current = 6.2 A

Powermesh™II Power MOSFET // Drain-source voltage = 400 V // Drain current = 5.5 A

N-channel 68 V, 0.0082 R, 98 A, TO-220

P-CHANNEL POWER MOSFET // DRAIN SOURCE VOLTAGE 100V // DRAIN CURRNET= 12A

N-channel TrenchMOS transistor // Drain-source voltage = 100 V // Continuous drain current = 23 A

Advanced Process Technology // VDSS = 55V // ID = 110A

N-CHANNEL POWER MOSFET // Drain-Source Voltage = 600V // Collector Current = 13A

SILICON N-CHANNEL POWER MOSFET // Drain to Source Voltage (VDSS) =600 V

MOS-FET N-Channel enhanced // p-MOSIII Power Switch 900V 5A 45W

Switching Regulator Applications\\Drain-source voltage VDSS =500 V\\